AP5322GM-HF mosfet equivalent, dual n-channel enhancement mode power mosfet.
G1
BVDSS RDS(ON) ID
D1
G2 S1
100V 250mΩ
1.9A
D2
S2
The SO-8 package is widely preferred for all commercialindustria.
AP5322 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of po.
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